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Beijing Yingyu Electronics Technology Co.,Led
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Beijing, China
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Porous graphene
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North America, Eastern Europe, Western Europe, Domestic Market

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Founded in 2011, Beijing Yingyu Electronics Technology Co., Ltd. is the first Chinese hi-tech enterprise focusing on graphene macroscopic preparation and application. With collective R&D teams’ efforts from the University of Science and Technology Beijing, Peking University, Chinese Academy of Sciences, etc, Yingyu has made great success in the related field. In 2011, Yingyu was the first to develop the graphene mixture powder. Later, Yingyu had successfully separated high purity graphene from the graphene mixture in 2012 and developed the void graphene material in 2013. The thickness of void graphene is about 0.34nm-2nm while the diameter and pore diameter are 50nm-500nm and 2nm-7nm.Conductivity(S/m)>10000. Non-activated BET nitrogen adsorption is 315.3㎡/g as activated BET nitrogen adsorption is 600㎡/g. Beijing Yingyu electronic technology Co., Ltd. is committed to the application research of graphene micro-electronics photoelectric device, electrochemical energy storage and other fields. Our daily capacity of graphene powder is 2kg, welcome to discuss cooperation with us Hotline:(86)18610626778 Mr.Hao E-mail:964917375@qq.com
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2016 Hot sale low price resistance
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XC7A15T-2CSG324C/XC3S250E-4PQG208I/XC3S500E4PQG208C/XC6SLX75T-2FGG484I/ADXRS453BRGZ/STM32F103C8T6 /
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XC7A15T-2CSG324C/XC3S250E-4PQG208I/XC3S500E4PQG208C/XC6SLX75T-2FGG484I/ADXRS453BRGZ/STM32F103C8T6 /
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XC7A15T-2CSG324C/XC3S250E-4PQG208I/XC3S500E4PQG208C/XC6SLX75T-2FGG484I/ADXRS453BRGZ/STM32F103C8T6 /
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